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M28W160CT70N6E

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N6E

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N6

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N6

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N6F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N6F

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N6S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N6S

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N6T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N6T

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M28W160CT70N6U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

NUMONYXNUMONYX

恒忆

M28W160CT70N6U

16Mbit(1Mbx16,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM28W160Cisa16Mbit(1Mbitx16)non-volatileFlashmemorythatcanbeerasedelectricallyattheblocklevelandprogrammedin-systemonaWord-by-Wordbasis.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.VDDQallowstodrivethe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    M28W160CT70N6E

  • 功能描述:

    闪存 STD FLASH 16 MEG

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 数据总线宽度:

    1 bit

  • 存储类型:

    Flash

  • 存储容量:

    2 MB

  • 结构:

    256 K x 8

  • 接口类型:

    SPI

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.3 V

  • 最大工作电流:

    15 mA

  • 工作温度:

    - 40 C to + 85 C

  • 安装风格:

    SMD/SMT

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
MICRON
2021+
TSOP48
8630
镁光一级代理商,
询价
MICRON/镁光
23+
TSOP48
12500
专营美光原装现货
询价
MICRON
17+
TSOP
5760
MICRON专营原装进口现货
询价
MICROM
22+
TSOP48
36000
代理渠道力挺长期原装现货 可开增票
询价
MICRON
21+
TSOP48
3444
全新原装,假一赔十!
询价
MICRON/美光
22+
TSOP48
3
只做原装进口 免费送样!!
询价
MICRON
17+
TSOP48
32
原装库存有订单来谈优势
询价
MICRON/美光
21+
TSOP48
9800
只做原装正品假一赔十!正规渠道订货!
询价
MICRON
22+
TSOP48
9035
原装正品,实单请联系
询价
MICRON/镁光
22+
TSOP48
3000
支持任何机构检测 只做原装正品
询价
更多M28W160CT70N6E供应商 更新时间2024-4-28 19:52:00