首页 >M1433E>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Lithium-IonBatteryChargeControl(1to2cells) Outline ThisICisusedtocontrolchargingoflithium-ionbatteries.ThisoneICincorporatesfunctionsforconstantcurrentandconstant-voltagechargingandforprecharging,foranoverchargetimer,batterytemperaturedetection,andotherprotectivefunctions.Itwasdevelopedbyaddingtoth | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
ICforControlofLithium-ionBatteriesCharging Outline ThisICisusedtocontrolchargingoflithium-ionbatteries.Itisaone-chipchargecontrolICwheretheprotectioncircuitincorporatesconstant-current/constant-voltagechargeandprecharge,overchargetimer,andbatterytemperaturedetectionfunctions.Itwasdevelopedbyaddingthe | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
Lithium-IonBatteryChargeControl(1to2cells) Outline ThisICisusedtocontrolchargingoflithium-ionbatteries.ThisoneICincorporatesfunctionsforconstantcurrentandconstant-voltagechargingandforprecharging,foranoverchargetimer,batterytemperaturedetection,andotherprotectivefunctions.Itwasdevelopedbyaddingtoth | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
SMTVoltageControlledOscillator | BOWEIBOWEI Integrated Circuits CO.,LTD. 博威集成电路河北博威集成电路有限公司 | BOWEI | ||
IntegratedCircuitAudioPreamp Description: TheNTE1433isalinearintegratedcircuitina7–LeadSIPtypepackagedesignedforuseinhighvoltagepreamplificationapplications. Features: •PowerSupplywithWideWorkingVoltageRange(20–42Volts) •HighOpenLoopGain •ExtremelyLowDistortion •LowNoi | NTE NTE Electronics | NTE | ||
General-PurposeSwitchingDeviceApplications N-ChannelSiliconMOSFET General-PurposeSwitchingDeviceApplications Features •1.8Vdrive. •Halogenfreecompliance. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
SingleN-ChannelPowerMOSFET Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultralowonresistancerequirements. Features • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SingleN-ChannelPowerMOSFET Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultralowonresistancerequirements. Features • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SingleN-ChannelPowerMOSFET Thislow-profilehigh-powerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandultralowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorultralowonresistancerequirements. Features • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RF&MICROWAVETRANSISTORSUHFMOBILEAPPLICATIONS HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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