QBH-1423

RFAMPLIFIER

QBH-1423PM

RFAMPLIFIERMODEL

RN1423

SiliconNPNEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

RN1423

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Highcurrenttype(IC(max)=800mA) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •LowVCE(sat) •ComplementarytoRN2401~RN2406

S1423

SILICONPNPEPITAXIALTYPE(PCTPROCESS)

GENERALPURPOSEAMPLIFIERANDLOWNOISEAMPLIFIERAPPLICATIONS. FEATURES: -ExcellenthFELinearity:hFE(0.1mA)hFE(2mA) =0.95(Typ.) .DesignedforComplementaryUsewithS1420(hFE=70700 ; .SmallCollectorOutputCapacitance:Cob=4.5pF(Max.)

SCV1423

BoostConverterSync-Rect,PFM,DC-DC,True-Cutoff,Ring-Killer400mA

NCP1423isamonolithicmicropowerhighfrequencystep−up switchingconverterICspeciallydesignedforbatteryoperatedhand −heldelectronicproducts.ItintegratesSynchronousRectifierfor improvingefficiencyaswellaseliminatingtheexternalSchottky Diode.Highswitchingfrequency(up

SD1423

RF&MICROWAVETRANSISTORS800-960MHzBASESTATIONAPPLICATIONS

DESCRIPTION TheSD1423isagoldmetallizationepitaxialsiliconNPNplanartransistorusingdiffusedemitterballastresistorsforhighlinearityClassABoperationforcellularbasestationapplications.TheSD1423isdesignedasamediumpoweroutputdeviceorasthedriverfortheSD1424. ■

SFT1423

N-ChannelPowerMOSFET500V,2A,4.9,SingleTP/TP-FA

N-ChannelPowerMOSFET 500V,2A,4.9Ω,SingleTP/TP-FA Features •ON-resistance •Protectiondiodein •4Vdrive

SFT1423

General-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •4Vdrive.

SFT1423

N-Channel650V(D-S)MOSFET