SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES: - Excellent hFE Linearity : hFE (0.1mA) hFE (2mA) =0.95(Typ.) . Designed for Complementary Use with S1420(hFE =70 700 ; . Small Collector Output Capacitance: C ob =4. 5pF(Max.)

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TOSHIBA

东芝

Boost Converter Sync-Rect, PFM, DC-DC, True-Cutoff, Ring-Killer 400 mA

NCP1423 is a monolithic micropower high frequency step−up switching converter IC specially designed for battery operated hand −held electronic products. It integrates Synchronous Rectifier for improving efficiency as well as eliminating the external Schottky Diode. High switching frequency (up

文件：308.02 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. ■

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STMICROELECTRONICS

意法半导体

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive.

文件：285.7 Kbytes 页数：4 Pages

SANYO

三洋