首页 >M13302-SLATE-BULK>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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CSD13302W12VNChannelNexFET??PowerMOSFET | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
CSD13302W12VNChannelNexFET™PowerMOSFET 1Features 1•UltraLowOnResistance •LowQgandQgd •SmallFootprint1mm×1mm •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This14.6mΩ,12V,N-Channeldeviceis | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
CSD13302W12VNChannelNexFET™PowerMOSFET 1Features 1•UltraLowOnResistance •LowQgandQgd •SmallFootprint1mm×1mm •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This14.6mΩ,12V,N-Channeldeviceis | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
CSD13302W12VNChannelNexFET™PowerMOSFET 1Features 1•UltraLowOnResistance •LowQgandQgd •SmallFootprint1mm×1mm •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This14.6mΩ,12V,N-Channeldeviceis | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
CSD13302W12VNChannelNexFET??PowerMOSFET | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
CSD13302W12VNChannelNexFET™PowerMOSFET 1Features 1•UltraLowOnResistance •LowQgandQgd •SmallFootprint1mm×1mm •LowProfile0.62mmHeight •PbFree •RoHSCompliant •HalogenFree 2Applications •BatteryManagement •LoadSwitch •BatteryProtection 3Description This14.6mΩ,12V,N-Channeldeviceis | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
HighLMiniInductors | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
132.5MHzSAWFilter4.5MHzBandwidth | SIPATSIPAT Co,Ltd 胜普电子重庆胜普电子有限公司 | SIPAT | ||
22(7/30)AWGTinnedCopper | ALPHAWIREAlpha Wire 阿尔法电线 | ALPHAWIRE |
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