M02016数据手册MACOM中文资料规格书

描述 Description

The M02016 CMOS transimpedance amplifier (TIA) with AGC is manufactured in sub-micron CMOS. The AGC gives a wide dynamic range of 35 db. The high transimpedance gain of 24 kO gives good sensitivity. For optimum system performance, the M02016 die should be mounted with a silicon or InGaAs PIN photodetector inside a lensed TO-Can or other optical sub-assembly. The M02016 can be used with internal or exteral bias to optimize the PINs performance. A replica of the average photodiode current is available at the MON pad for photo-alignment and signal strength monitoring.

特性 Features

·Typical -29dBm sensitivity, +6 dBm saturation at 1.25 Gbps when used with 0.9 A/W InGaAs PIN. (Cpd = 0.5pF, BER 10-10)
·Same pad layout and die size as M02011/3/4/5
·Internal or external bias for photodiode
·AGC provides dynamic range of 35 dBm
·Monitor Output
·Available in die form only
·PIN or APD sensor
·Standard +3.3 Volt supply
·Differential output
·Fabricated in standard CMOS
·Typical differential transimpedance: 24 kO
·Minimum 800 Mhz bandwidth and multi-pole roll-off provide operation to 1.25Gbps

应用 Application

·Enterprise Solutions
·Optical Networking