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MA10100

Siliconepitaxialplanartype

Siliconepitaxialplanartype Forswitchingcircuits ■Features •Highbreakdownvoltage:VR=200V •SmallterminalcapacitanceCt

PanasonicPanasonic Semiconductor

松下松下电器

MAT10100

AttenuatorDIE

MA-COM

M/A-COM Technology Solutions, Inc.

MBR10100

SWITCHMODE??PowerRectifiers

SCHOTTKYBARRIERRECTIFIERS10AMPERES60to100VOLTS ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.These state–of–the–artdeviceshavethefollowingfeatures: •Guard–RingforStressProtection •LowForwardVoltage •150°COperatingJunctionTemperature •Guara

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MBR10100

10.0AMPS.SchottkyBarrierRectifiers

FEATURES -Lowpowerloss,highefficiency -Guardringforovervoltageprotection -Highsurgecurrentcapability -ComplianttoRoHSDirective2011/65/EUandinaccordancetoWEEE2002/96/EC -Halogen-freeaccordingtoIEC61249-2-21definition

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MBR10100

HighVoltageSchottkyRectifiers

FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum

VishayVishay Siliconix

威世科技威世科技半导体

MBR10100

SWITCHMODEPowerRectifiers

SWITCHMODE™PowerRectifiers ThisseriesofSWITCHMODEpowerrectifiersusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate−of−the−artdeviceshavethefollowingfeatures: Features •Guard−RingforStressProtection •LowForwardVoltage •175°COperatingJunctionT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBR10100

SCHOTTKYBARRIERRECTIFIER

FEATURE •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling.andPolarityProtectionA

TELTokyo Electron Ltd.

东电电子东京电子有限公司

MBR10100

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR10100

10.0AMPS.SchottkyBarrierRectifiers

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MBR10100

High-VoltageSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum

VishayVishay Siliconix

威世科技威世科技半导体

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