| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector–EmitterSustainingVoltage—:VCEO(SUS)=-80V •DCCurrentGain—:hFE=750(Min)@IC=-2A =100(Min)@IC=-4A •ComplementtoTypeMJE803 APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingap | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
COMPLEMENTARYPOWERDARLINGTONTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
PlasticDarlingtonComplementarySiliconPowerTransistors ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PlasticDarlingtonComplementarySiliconPowerTransistors Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERTRANSISTORS(4.0A,60-80V,40W) PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector–EmitterBreakdownVoltage—:V(BR)CEO=-80V •DCCurrentGain—:hFE=750(Min)@IC=-2A •ComplementtoTypeMJE803T APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
POLYFET |
19+ |
LX2 |
3128 |
原装进口假一罚十 |
询价 | ||
POLYFET |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
POLYFET |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
POLYFET |
2021+ |
LX2 |
3128 |
十年专营原装现货,假一赔十 |
询价 | ||
24+ |
5000 |
公司存货 |
询价 | ||||
CRBOX |
25+ |
DIP- |
3200 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
CRBOX |
CAN8 |
6500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
MicrosemiCorporation |
24+ |
SOT-23-6 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
询价 | ||
Microsemi Corporation |
24+ |
SOT-23-6 |
65200 |
一级代理/放心采购 |
询价 | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 |
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