TEA1721BT

HVstart-upflybackcontrollerwithintegratedMOSFETfor5Wapplications,905Hzburstfrequency

TEA1721DT

HVstart-upflybackcontrollerwithintegratedMOSFETfor5Wapplications,1270Hzburstfrequency

TEA1721FT

HVstart-upflybackcontrollerwithintegratedMOSFETfor5Wapplications,1750Hzburstfrequency

TM1721

LCDDrivercontrolspecialcircuit

TW1721

DualFeedEmbeddedBeiDou/Galileo/GPS/GLONASSAntenna

TZ1721A

CrystalUnitSMD2.5x2.040.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

UPA1721

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1721isN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A)

UPA1721

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A) RDS(on)3=17.0mΩMAX.(VGS=4.0V,ID=5.0A) •LowCiss:Ciss=2200pFTYP. •Built-inG-Sprotectiondi

UPA1721G

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A) RDS(on)3=17.0mΩMAX.(VGS=4.0V,ID=5.0A) •LowCiss:Ciss=2200pFTYP. •Built-inG-Sprotectiondi

UPA1721G

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheµPA1721isN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A)