Power Transducer Series L-UNIT

文件：146.39 Kbytes 页数：5 Pages

MSYSTEM

爱模

-20V P-Channel Enhancement Mode MOSFET

Description The NTR3A30PZ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

文件：2.67241 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

??0 V, ??.9 A, Single P?묬hannel 2.4 x 2.9 x 1.0 mm SOT??3 Package

文件：119.76 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：101 Kbytes 页数：6 Pages

ONSEMI

安森美半导体