丝印：LVRA4SEP；Package：SOIC(D)；SN55LVRA4-SEP Radiation Tolerant Quad Channel High-Speed Differential Receiver

1 Features • VID V62/25606-01XE • Total ionizing dose characterized at 30krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL) immune to linear energy transfer

文件：1.11687 Mbytes 页数：31 Pages

TI

德州仪器

丝印：LVRA4SEP；Package：SOIC(D)；SN55LVRA4-SEP Radiation Tolerant Quad Channel High-Speed Differential Receiver

1 Features • VID V62/25606-01XE • Total ionizing dose characterized at 30krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL) immune to linear energy transfer

文件：1.1537 Mbytes 页数：31 Pages

TI

德州仪器

丝印：LVRA4SEP；Package：SOIC(D)；SN55LVRA4-SEP Radiation Tolerant Quad Channel High-Speed Differential Receiver

1 Features • VID V62/25606-01XE • Total ionizing dose characterized at 30krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL) immune to linear energy transfer

文件：1.1537 Mbytes 页数：31 Pages

TI

德州仪器