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NCV8406

Self-ProtectedLowSideDriver

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV8406A

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit65V,7.0A,SingleN-Channel

NCV8406A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Featu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV8406A

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit65V,7.0A,SingleN−Channel

NCV8406A/BisathreeterminalprotectedLow−SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain−to−Gateclampingforovervoltage protection.Thisdeviceoffersprotectionandissuitableforharsh automotiveenvironments. Feature

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV8406A

Self-ProtectedLowSideDriver

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV8406ADTRKG

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV8406ADTRKG

Self-ProtectedLowSideDriver

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV8406ADTRKG

Self-ProtectedLowSideDriver

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV8406ADTRKG

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit65V,7.0A,SingleN−Channel

NCV8406A/BisathreeterminalprotectedLow−SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain−to−Gateclampingforovervoltage protection.Thisdeviceoffersprotectionandissuitableforharsh automotiveenvironments. Feature

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV8406ADTRKG

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit65V,7.0A,SingleN-Channel

NCV8406A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Featu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV8406B

Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit65V,7.0A,SingleN-Channel

NCV8406A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Featu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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