QUADRUPLE BUS BUFFER GATES WITH 3 STATE OUTPUTS

文件：395.95 Kbytes 页数：17 Pages

TI

德州仪器

丝印：LV126A；Package：WQFN；SN74LVC126A Quadruple Bus Buffer Gate With 3-State Outputs

1 Features • Operates from 1.65V to 3.6V • Specified from –40°C to +125°C • Inputs accept voltages up to 5.5V • Maximum tpd of 4.7ns at 3.3V • Typical VOLP (output ground bounce), 2V at VCC = 3.3V, TA = 25°C • Latch-u

文件：2.02509 Mbytes 页数：33 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATES WITH 3 STATE OUTPUTS

TI

德州仪器

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

文件：21.88 Kbytes 页数：2 Pages

NTE

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉