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MJE703

NPN(HIGHDCCURRENTGAIN)

SamsungSamsung semiconductor

三星三星半导体

MJE703

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJE703

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE703

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage—:VCEO(SUS)=-80V •DCCurrentGain—:hFE=750(Min)@IC=-2A =100(Min)@IC=-4A •ComplementtoTypeMJE803 APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speedswitchingap

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE703

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE703

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美国中央半导体

MJE703

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE703G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE703G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE703T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

详细参数

  • 型号:

    LTV703VM-V

  • 制造商:

    LITEON

  • 制造商全称:

    Lite-On Technology Corporation

  • 功能描述:

    High Collector-Emitter Voltage Type Photocoupler LTV-703V Series

供应商型号品牌批号封装库存备注价格
LITEON/光宝
23+
SOP-6
50000
全新原装正品现货,支持订货
询价
LITEON/光宝
24+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
LITEON/光宝
23+
SOP-6
8000
只做原装现货
询价
LITEON
04+
DIP
2000
询价
LITEON
2410+
DIP6/SOP6
3688
优势代理渠道 原装现货 可全系列订货
询价
LITE-ON
24+
40000
询价
LITEON/光宝
2223+
SOP-6
26800
只做原装正品假一赔十为客户做到零风险
询价
LITON
24+
SOP-6
60000
询价
LITEON
24+
DIP-6
2560
绝对原装!现货热卖!
询价
LT
23+
DIP-6
9526
询价
更多LTV703VM-V供应商 更新时间2025-7-21 10:59:00