首页 >LTV-702FS-TA-D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPN(HIGHDCCURRENTGAIN)
| SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
PlasticDarlingtonComplementarySiliconPowerTransistors ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
COMPLEMENTARYPOWERDARLINGTONTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PlasticDarlingtonComplementarySiliconPowerTransistors Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERTRANSISTORS(4.0A,60-80V,40W) PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
iscSiliconPNPDarlingtonPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
7/8(22.2mm)SingleTurnWirewoundPrecisionPotentiometer | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
MetalPlateCementResistors | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
StepRecoveryDiode | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM |
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