首页 >LTP555>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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300Msps,12-BitDACwithComplementaryVoltageOutputs GeneralDescription TheMAX555isanadvanced,monolithic,12-bitdigital-to-analogconverter(DAC)withcomplementary50Ωoutputs.Fabricatedusinganoxide-isolatedbipolarprocess,theMAX555isdesignedforsignal-reconstructionapplicationsatanoutputupdaterateof300Msps.Itincorporate | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
300Msps,12-BitDACwithComplementaryVoltageOutputs GeneralDescription TheMAX555isanadvanced,monolithic,12-bitdigital-to-analogconverter(DAC)withcomplementary50Ωoutputs.Fabricatedusinganoxide-isolatedbipolarprocess,theMAX555isdesignedforsignal-reconstructionapplicationsatanoutputupdaterateof300Msps.Itincorporate | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
GOATANTIANTI-MOUSEIGGG(HL)AANTIBODY | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
ThisdocumentprovidesanoverviewoftheMPC555microcontroller,includingablockdiagramshowingthemajormodularcomponentsandsectionsthatlis | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
ThisdocumentprovidesanoverviewoftheMPC555microcontroller,includingablockdiagramshowingthemajormodularcomponentsandsectionsthatlis | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
ThisdocumentprovidesanoverviewoftheMPC555microcontroller,includingablockdiagramshowingthemajormodularcomponentsandsectionsthatlis | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
RFLOWPOWERTRANSISTORNPNSILICON TheRFLine NPNSiliconRFLowPowerTransistor DesignedprimarilyforwidebandlargesignalpredriverstagesintheUHFfrequencyrange. •Specified@12.5V,470MHzCharacteristics@Pout=1.5W CommonEmitterPowerGain=12.5dB(Typ) Efficiency60(Typ) •CostEffectivePowerMac | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,470MHzCharacteristics •OutputPower=1.5W •MinimumGain=11dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforImpr | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
NPNSILICONRFTRANSISTOR DESCRIPTION: TheASIMRF555isdesignedforWidebandlargesignalstagesintheUHFfrequencyrange. FEATURES: •12.5V,470MHz. •POUT=1.5W •GP=11min. •η=60(Typ) | ASI Advanced Semiconductor | ASI | ||
RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,470MHzCharacteristics •OutputPower=1.5W •MinimumGain=11dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforImpr | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
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