首页 >LTK8403>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN?묬hannel,SOT??23 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN-Channel NCV8403A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Featu | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Self-ProtectedLowSideDriver | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN-Channel NCV8403A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Feature | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN-Channel NCV8403A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Feature | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Self-ProtectedLowSideDriver | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-channelAdvancedModePowerMOSFET Features VDS=40V,ID=150A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
Self-ProtectedLowSideDriverwithTemperatureandCurrentLimit42V,14A,SingleN-Channel NCV8403A/BisathreeterminalprotectedLow-SideSmartDiscrete device.Theprotectionfeaturesincludeovercurrent,overtemperature, ESDandintegratedDrain-to-Gateclampingforovervoltageprotection. Thisdeviceoffersprotectionandissuitableforharshautomotive environments. Featu | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
