200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：136 Kbytes 页数：2 Pages

VMI

200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

VMI

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

文件：37.58 Kbytes 页数：2 Pages

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：36.56 Kbytes 页数：2 Pages

POLYFET

RECTIFIER DIODE

FEATURES ■ Double Side Cooling ■ High Surge Capability APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Suppllllis ■ Welding ■ Battery Chargers

文件：403.76 Kbytes 页数：6 Pages

TRSYS

Transys Electronics