LTI402T数据手册行情报价VMIVMI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
LTI402T	文件：136 Kbytes Page：2 Pages	200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time 200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time 文件：136 Kbytes 页数：2 Pages	VMI	VMI
LTI402UF	文件：127.06 Kbytes Page：2 Pages	200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time 200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time 文件：127.06 Kbytes 页数：2 Pages	VMI	VMI
LTI402UFT	文件：136 Kbytes Page：2 Pages	200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time 200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time 文件：136 Kbytes 页数：2 Pages	VMI	VMI
LY402	文件：37.58 Kbytes Page：2 Pages	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu 文件：37.58 Kbytes 页数：2 Pages	Polyfet	Polyfet

型号：
LTI402T
制造商：
VMI
制造商全称：
VMI
功能描述：
200 V - 1,000 V Single Phase Bridge 20.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

更多LTI402T供应商更新时间2025-10-4 10:04:00