NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temp

文件：55.72 Kbytes 页数：8 Pages

PHI

PHI

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temp

文件：55.72 Kbytes 页数：8 Pages

PHI

PHI

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors provide excellent current sha

文件：71.64 Kbytes 页数：12 Pages

PHI

PHI

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirel

文件：51.8 Kbytes 页数：8 Pages

PHI

PHI

NPN microwave power transistor

恩XP

NPN microwave power transistor

恩XP

NPN microwave power transistor

恩XP