首页 >LTC5836WC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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MOSFET:P-ChannelSiliconMOSFETOSFETGeneral-PurposeSwitchingDeviceApplications MOSFET:P-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode Features •CompositetypewithanP-channelsiliconMOSFET(MCH3307)andaschottkybarrierdiode(SS10015M)containedinonepackagefacilitatinghigh-densitymounting. •[MOSFET] •LowON-resistance. •1.8Vdrive. •[SB | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
5.0WATT6.8-270VOLTSZENERDIODES | SSDI Solid States Devices, Inc | SSDI | ||
ElectricalSpecificationsat25oC ZenerDiodes ElectricalSpecificationsat25°C | AMMSEMIAmerican Microsemiconductor 美国微半导体有限公司 | AMMSEMI | ||
POWERZENERS5WATT POWERZENERS5WATT AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | DIGITRON | ||
POWERZENERS DESCRIPTION Fused-in-glass,metallurgically-bonded5wattzeners. FEATURES •2TimesGreaterSurgeRatingthanConventional10WattZeners •SmallPhysicalSize | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
POWERZENERS DESCRIPTION Fused-in-glass,metallurgically-bonded5wattzeners. FEATURES •2TimesGreaterSurgeRatingthanConventional10WattZeners •SmallPhysicalSize | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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