首页 >LT6444FJ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
uPResetCircuitswithLongManualResetSetupPeriod | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
關PResetCircuitswithLongManualResetSetupPeriod | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
General-PurposeSwitchingDeviceApplications General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1=75mΩ(typ.) •4Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
SingleN-ChannelPowerMOSFET ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features •LowOn-Resistance •4Vdriv | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
General-PurposeSwitchingDeviceApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
SingleN-ChannelPowerMOSFET ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features •LowOn-Resistance •4Vdriv | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SingleN-ChannelPowerMOSFET ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features •LowOn-Resistance •4Vdriv | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
450nA,9kHzOpAmpNoPhaseReversalAnalogActiveFilters | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
450nA,9kHzOpAmp | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
450nA,9kHzOpAmpNoPhaseReversalAnalogActiveFilters | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip |
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