MAX892L

2A,Current-Limited,High-SideP-ChannelSwitchwithThermalShutdown

GeneralDescription TheMAX869LP-channelloadswitchfeaturesanaccurateuser-setcurrentlimitandlowon-resistance.Thisswitchisdesignedtoprotectyourpowersourcefromshortsandsurgesbylimitingcurrentandpreventingthesystemsupplyfrombeingpulledlow.Theinputvoltagerang

MAX892LC/D

Current-Limited,High-SideP-ChannelSwitcheswithThermalShutdown

GeneralDescription TheMAX891L/MAX892Lsmart,low-voltage,P-channel,MOSFETpowerswitchesareintendedforhigh-sideload-switchingapplications.Theseswitchesoperatewithinputsfrom2.7Vto5.5V,makingthemidealforboth3Vand5Vsystems.Internalcurrent-limitingcircuitryprotectst

MAX892LCSLASHD

Current-Limited,High-SideP-ChannelSwitcheswithThermalShutdown

GeneralDescription TheMAX891L/MAX892Lsmart,low-voltage,P-channel,MOSFETpowerswitchesareintendedforhigh-sideload-switchingapplications.Theseswitchesoperatewithinputsfrom2.7Vto5.5V,makingthemidealforboth3Vand5Vsystems.Internalcurrent-limitingcircuitryprotectst

MRF892

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASIMRF892isDesignedforClassAB,CellularBaseStationApplicationsupto900MHz. FEATURES: •InternalInputMatchingNetwork •PG=8.5dBat14W/900MHz •Omnigold™MetalizationSystem

OPA892

OPA8922-GHz,10-V/VStable,0.95-nV/√Hz,Ultra-LowTHDOperationalAmplifier

1Features •Ultra-low0.95-nV/√Hzvoltagenoise •Highspeed: –2-GHzgain-bandwidthproduct –700-V/μsslewrate –30-nssettlingtime(0.1) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc

OPA892

OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers

1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

OPA892DR

OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers

1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

OPA892DR

OPA8922-GHz,10-V/VStable,0.95-nV/√Hz,Ultra-LowTHDOperationalAmplifier

1Features •Ultra-low0.95-nV/√Hzvoltagenoise •Highspeed: –2-GHzgain-bandwidthproduct –700-V/μsslewrate –30-nssettlingtime(0.1) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc

OPAX892

OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers

1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

SIR892DP

N-Channel25-V(D-S)MOSFET