首页 >LT-892>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2A,Current-Limited,High-SideP-ChannelSwitchwithThermalShutdown GeneralDescription TheMAX869LP-channelloadswitchfeaturesanaccurateuser-setcurrentlimitandlowon-resistance.Thisswitchisdesignedtoprotectyourpowersourcefromshortsandsurgesbylimitingcurrentandpreventingthesystemsupplyfrombeingpulledlow.Theinputvoltagerang | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
Current-Limited,High-SideP-ChannelSwitcheswithThermalShutdown GeneralDescription TheMAX891L/MAX892Lsmart,low-voltage,P-channel,MOSFETpowerswitchesareintendedforhigh-sideload-switchingapplications.Theseswitchesoperatewithinputsfrom2.7Vto5.5V,makingthemidealforboth3Vand5Vsystems.Internalcurrent-limitingcircuitryprotectst | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
Current-Limited,High-SideP-ChannelSwitcheswithThermalShutdown GeneralDescription TheMAX891L/MAX892Lsmart,low-voltage,P-channel,MOSFETpowerswitchesareintendedforhigh-sideload-switchingapplications.Theseswitchesoperatewithinputsfrom2.7Vto5.5V,makingthemidealforboth3Vand5Vsystems.Internalcurrent-limitingcircuitryprotectst | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASIMRF892isDesignedforClassAB,CellularBaseStationApplicationsupto900MHz. FEATURES: •InternalInputMatchingNetwork •PG=8.5dBat14W/900MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
OPA8922-GHz,10-V/VStable,0.95-nV/√Hz,Ultra-LowTHDOperationalAmplifier 1Features •Ultra-low0.95-nV/√Hzvoltagenoise •Highspeed: –2-GHzgain-bandwidthproduct –700-V/μsslewrate –30-nssettlingtime(0.1) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers 1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f= | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers 1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f= | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
OPA8922-GHz,10-V/VStable,0.95-nV/√Hz,Ultra-LowTHDOperationalAmplifier 1Features •Ultra-low0.95-nV/√Hzvoltagenoise •Highspeed: –2-GHzgain-bandwidthproduct –700-V/μsslewrate –30-nssettlingtime(0.1) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers 1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f= | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
N-Channel25-V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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