LT-0600L

T1/E1/CEPT/ISDN-PRI TRANSFORMER

MSA-0600

CascadableSiliconBipolarMMICAmplifier

Description TheMSA-0600isahighperformancesiliconbipolarMonolithicMicrowaveIntegratedCircuit(MMIC)chip.ThisMMICisdesignedforuseasageneralpurpose50Wgainblock.TypicalapplicationsincludenarrowandbroadbandIFandRFamplifiersincommercial,industrialandmilitaryap

MSA-0600

CascadableSiliconBipolarMMICAmplifier

Description TheMSA-0600isahighperformancesiliconbipolarMonolithicMicrowaveIntegratedCircuit(MMIC)chip.ThisMMICisdesignedforuseasageneralpurpose50Ωgainblock.TypicalapplicationsincludenarrowandbroadbandIFandRFamplifiersincommercial,industrialandmilitaryap

N0600N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N0600N

MOSFIELDEFFECTTRANSISTOR

Description TheN0600NisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=25mΩMAX.(VGS=10V,ID=15A) ⎯RDS(on)2=36mΩMAX.(VGS=4.5V,ID=15A) •Lowinputcapacitance ⎯Ciss

OZRA0600FF

RadialLeadedPTC

SAB0600

THREEETONECHIMESINGLETONECHIMEDUALTONECHIME

SL0600A

GENERALPURPOSEVIDEOFILTERS

SL0600J

GENERALPURPOSEVIDEOFILTERS

ST-0600

ST-0600SeriesSparctube??SwitchingSparkGap