SiC Diode

Diodes

美台半导体

Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：361.15 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

文件：369.73 Kbytes 页数：4 Pages

HUIXIN

慧芯电子

Enhanced surge capability

文件：548.09 Kbytes 页数：4 Pages

LITTELFUSE

力特