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LSA11013P

COMMON MODE CHOKE COIL

FEATURES| ®Excellentfrequencycharacteristics.| ®Useofinsulatingmaterialhavingsuperiorflame| resistance| ®Availableeitherverticalmountingtype,orhorizontal| mountingtype.| APPLICATIONS| @®Personalcomputersandperipherals.| @Digitalequipments.| ®Switching

DIT

DONG IL TECHNOLOGY LTD.

MJ11013

PowerTransistors

PowerTransistors TO-3Case(Continued)

CentralCentral Semiconductor Corp

美国中央半导体

MJ11013

PNPSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

PNPSILICONDARLINGTONTRANSISTOR SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

永盛电子永盛电子(香港)有限公司

MJ11013

30AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.120VOLTS200WATTS

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain-hFE=1000(Min)@IC−20Adc •MonolithicConstructionwithBuilt−inBaseEmitterShuntResistor •JunctionTemperatureto+200C

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJ11013

POWERTRANSISTORS(30A,60-120V,200W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGainhFE=1000(Min)@IC=20A •MonolithicConstructionwithBuilt−inBaseEmitterShun

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MJ11013

BipolarPNPDeviceinaHermeticallysealedTO3

SEME-LAB

Seme LAB

MJ11013

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-90V(Min.) •HighDCCurrentGain-:hFE=1000(Min.)@IC=-20A •LowCollectorSaturationVoltage-:VCE(sat)=-3.0V(Max.)@IC=-20A •ComplementtoTypeMJ11014 APPLICATIONS •Designedforuseasoutputdevicesincomplementary

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJ11013

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON

High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC–20Adc •MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor •JunctionTemperatureto+200°C

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJ11013

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

PS11013

PatchLead-CAT5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

供应商型号品牌批号封装库存备注价格
原厂原装
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
询价
N/A
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
N/A
25+
NA
880000
明嘉莱只做原装正品现货
询价
Presidio
23+
DIE
50000
全新原装正品现货,支持订货
询价
Presidio
20+
DIE
614
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Presidio
2023+
DIE
8800
正品渠道现货 终端可提供BOM表配单。
询价
ROHM/罗姆
23+
SOT-323
50000
全新原装正品现货,支持订货
询价
ROHM/罗姆
24+
NA/
115240
原装现货,当天可交货,原型号开票
询价
ROHM/罗姆
24+
SOT-323
60000
全新原装现货
询价
ROHM/罗姆
21+
SOT-323
25630
原装正品
询价
更多LSA11013P供应商 更新时间2025-5-1 9:30:00