HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

文件：202.28 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

文件：298.94 Kbytes 页数：11 Pages

IRF

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：1.00187 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Simple Drive Requirements

文件：371.48 Kbytes 页数：11 Pages

IRF

丝印：LR7843；Package：TO-252；30V N-Channel MOSFET

Applications
High Frequency Synchronous Buck Converters for Computer Processor Power

文件：493.35 Kbytes 页数：7 Pages

UMW

友台半导体