丝印：LPC660IM；Package：SOIC；LPC660 Low Power CMOS Quad Operational Amplifier

1FEATURES 2• Rail-to-rail output swing • Micropower operation: (1 mW) • Specified for 100 kΩ and 5 kΩ loads • High voltage gain: 120 dB • Low input offset voltage: 3 mV • Low offset voltage drift: 1.3 μV/°C • Ultra low input bias current: 2 fA • Input common-mode includes V− • Operation r

文件：1.026 Mbytes 页数：27 Pages

TI

德州仪器

LPC660 Low Power CMOS Quad Operational Amplifier

文件：1.32785 Mbytes 页数：24 Pages

TI

德州仪器

丝印：LPC660IM；Package：SOIC；LPC660 Low Power CMOS Quad Operational Amplifier

1FEATURES 2• Rail-to-rail output swing • Micropower operation: (1 mW) • Specified for 100 kΩ and 5 kΩ loads • High voltage gain: 120 dB • Low input offset voltage: 3 mV • Low offset voltage drift: 1.3 μV/°C • Ultra low input bias current: 2 fA • Input common-mode includes V− • Operation r

文件：1.026 Mbytes 页数：27 Pages

TI

德州仪器

丝印：LPC660IM；Package：SOIC；LPC660 Low Power CMOS Quad Operational Amplifier

1FEATURES 2• Rail-to-rail output swing • Micropower operation: (1 mW) • Specified for 100 kΩ and 5 kΩ loads • High voltage gain: 120 dB • Low input offset voltage: 3 mV • Low offset voltage drift: 1.3 μV/°C • Ultra low input bias current: 2 fA • Input common-mode includes V− • Operation r

文件：1.026 Mbytes 页数：27 Pages

TI

德州仪器