MEDIUM POWER PHEMT WITH SOURCE VIAS

DESCRIPTION AND APPLICATIONS The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier gate. The recessed “mushroom” gate structure mini

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FILTRONIC

MEDIUM POWER PHEMT WITH SOURCE VIAS

Filtronic

60 Watts Medium Power WR-62 Waveguide Load 12.4 GHz to 18 GHz

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PASTERNACK

PHOTOMULTIPLIER TUBE

For Astrophysics and Other Ultraviolet Radiation Detection 28 mm (1-1/8 Inch) Diameter, 11-stage, Cs-Te Photocathode Solar Blind Response (115 nm to 320 nm), Head-On Type

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HAMAMATSUHamamatsu Photonics Co.,Ltd.

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