LPA6836V中文资料FILTRONIC数据手册PDF规格书
LPA6836V规格书详情
DESCRIPTION AND APPLICATIONS
The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 360 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
FEATURES
♦ 25 dBm Output Power at 1-dB Compression at 18 GHz
♦ 9.5 dB Power Gain at 18 GHz
♦ 55 Power-Added Efficiency
♦ Source Vias to Backside Metallization
产品属性
- 型号:
LPA6836V
- 制造商:
FILTRONIC
- 制造商全称:
FILTRONIC
- 功能描述:
MEDIUM POWER PHEMT WITH SOURCE VIAS
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LSI |
24+ |
NA/ |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
N/A |
08PB |
BGA |
1834 |
询价 | |||
rf-bay |
24+ |
模块 |
400 |
询价 | |||
N/A |
24+ |
BGA |
26200 |
原装现货,诚信经营! |
询价 | ||
LSI |
25+23+ |
SMD |
22929 |
绝对原装正品全新进口深圳现货 |
询价 | ||
N/A |
24+ |
BGA |
3000 |
全新原装现货 优势库存 |
询价 | ||
LSI |
2407+ |
7750 |
原装现货!实单直说!特价! |
询价 | |||
LSI/CSI传奇 |
24+ |
BGA |
47186 |
郑重承诺只做原装进口现货 |
询价 | ||
AGERE |
24+ |
QFN |
885 |
询价 | |||
LSI |
24+ |
SMD |
30980 |
原装现货/放心购买 |
询价 |