首页 >LP5867WCSPEVM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LP58677×6LEDMatrixDriverwith8-BitAnalogand8-Bitor16-BitPWMDimming 1Features •LEDmatrixtopology: –6constantcurrentsinkswith7scanswitches for42LEDdots –Configurablefor1to7scanswitches •Operatingvoltagerange: –VCC/VLEDrange:2.7Vto5.5V –Logicpinscompatiblewith1.8V,3.3V,and5V •6constantcurrentsinkswithhighprecision | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
60VN-ChannelMOSFET Features •LowRDS(on) •HighCurrentCapability • VDS(V)=60V ID=20A(VGS=10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET60V,20A,39m | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=39MΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter, | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
60V,22A,39mSingleN-Channel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
