2 W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct write 0.25 mm by 3000 mm Schottky barrier gate. The recessed “mushroom” gate structure minim

文件：44.96 Kbytes 页数：2 Pages

FILTRONIC

2W Power PHEMT

DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minim

文件：49.74 Kbytes 页数：2 Pages

FILTRONIC

2 W POWER PHEMT

Filtronic

PACKAGED 2W POWER PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “

文件：47.9 Kbytes 页数：3 Pages

FILTRONIC

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

文件：44.15 Kbytes 页数：3 Pages

FILTRONIC

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

文件：44.15 Kbytes 页数：3 Pages

FILTRONIC

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

文件：44.15 Kbytes 页数：3 Pages

FILTRONIC

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed

文件：44.15 Kbytes 页数：3 Pages

FILTRONIC

PACKAGED 2W POWER PHEMT

● DESCRIPTION AND APPLICATIONS\nThe LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mu    ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz\n   ♦ 8 dB Power Gain at 15 GHz\n   ♦ 60% Power-Added Efficiency;

Filtronic

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

Filtronic