PACKAGED 2W POWER PHEMT

● DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “

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PACKAGED 2W POWER PHEMT

● DESCRIPTION AND APPLICATIONS\nThe LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mu    ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz\n   ♦ 8 dB Power Gain at 15 GHz\n   ♦ 60% Power-Added Efficiency;

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2W PACKAGED POWER PHEMT

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TDFN-12

LOWPOWER

上传：深圳市赛尔通科技有限公司

TDFN10

LOWPOWER

上传：深圳市晨豪科技有限公司