LP2998 DDR-I and DDR-II Termination Regulator

文件：1.17987 Mbytes 页数：26 Pages

TI

德州仪器

丝印：LP2998MR；Package：SOPowerPAD(DDA)；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

文件：2.56645 Mbytes 页数：42 Pages

TI

德州仪器

丝印：LP2998MR；Package：SOPowerPAD(DDA)；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

文件：2.56645 Mbytes 页数：42 Pages

TI

德州仪器

丝印：LP2998MR；Package：SOPowerPAD(DDA)；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

文件：2.56645 Mbytes 页数：42 Pages

TI

德州仪器

丝印：LP2998MR；Package：SOPowerPAD(DDA)；LP2998/LP2998-Q1 DDR Termination Regulator

1 Features 1• AEC-Q100 Test Guidance with the following results (SO PowerPAD-8): – Device HBM ESD Classification Level H1C – Junction Temperature Range –40°C to 125°C • 1.35 V Minimum VDDQ • Source and Sink Current • Low Output Voltage Offset • No External Resistors Required • Linear Topo

文件：2.56645 Mbytes 页数：42 Pages

TI

德州仪器

DDR Termination Regulator

文件：2.56125 Mbytes 页数：33 Pages

TI

德州仪器

Package：8-PowerSOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 特殊用途稳压器 描述：IC REG CONV DDR 1OUT 8SOPWRPAD

TI

德州仪器