MPXA4101A

IntegratedSiliconPressureSensorforManifoldAbsolutePressureApplicationsOn-ChipSignalConditioned,Temperature

IntegratedSiliconPressureSensorforManifoldAbsolutePressureApplicationsOn-ChipSignalConditioned,TemperatureCompensatedandCalibrated TheFreescaleMPX4101A/MPXA4101A/MPXH6101AseriesManifoldAbsolutePressure(MAP)sensorforenginecontrolisdesignedtosenseabsoluteairpressure

MS4101D

PositronicProvidesCompleteCapability

Experience •Foundedin1966 •Involvementinthedevelopmentofinternationalconnector specificationsthroughEIA®,IECandISOaswellasPICMG®. •Introductionofnewanduniqueconnectorproductstotheelectronicsindustry. •Patentholderformanyuniqueconnectorfeaturesandmanufact

N4101

SMDRJ4510/100BASE-TwithMagneticModule

NTHS4101P

PowerMOSFET-20V,6.7A,P-ChannelChipFET

NTHS4101P

PowerMOSFET-20V,6.7A,P-ChannelChipFET-TM

NTHS4101P

PowerMOSFET

NTR4101P

TrenchPowerMOSFET-20V,SingleP-Channel,SOT-23

Features •Leading−20VTrenchforLowRDS(on) •−1.8VRatedforLowVoltageGateDrive •SOT−23SurfaceMountforSmallFootprint •Pb−FreePackageisAvailable Applications •Load/PowerManagementforPortables •Load/PowerManagementforComputing •ChargingCircuitsandBatteryProte

NTR4101P

TrenchPowerMOSFET

Features •Leading−20VTrenchforLowRDS(on) •−1.8VRatedforLowVoltageGateDrive •SOT−23SurfaceMountforSmallFootprint •NTRVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •These

NTR4101P

TrenchPowerMOSFET

NTR4101P

MOSFET–Power,SingleP-Channel,Trench,SOT-23-20V

Features •Leading−20VTrenchforLowRDS(on) •−1.8VRatedforLowVoltageGateDrive •SOT−23SurfaceMountforSmallFootprint •NTRVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevices