首页 >LNTA4001NT1GMOS>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SmallSignalMOSFET20V,238mA,Single,N?묬hannel,GateESDProtection,SC??5 MOSFET–Single,N-Channel,GateESDProtection,SmallSignal,SC-7520V,238mA Features •LowGateChargeforFastSwitching •Small1.6x1.6mmFootprint •ESDProtectedGate •AEC−Q101QualifiedandPPAPCapable−NVA4001N •TheseDevicesarePb−FreeandareRoHSCompliant Application | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AT90USB1287(AVR)64QFNdevice(2.7VVCC5.5V) Overview ThisdocumentdescribestheAT88CK109STK3,whichisadevelopmentkitfortheAT88SA100,AT88SA102,andATSA8810HSCryptoAuthenticationdevices.Thiskitusesamodularapproach.ThedevelopmentkitincludestheAT88MicrobaseboardandtheAT88CK109BK3CryptoAuthenticationdaughterboard | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
SmallSignalMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SmallSignalMOSFET20V,238mA,Single,N?묬hannel,GateESDProtection,SC??5 MOSFET–Single,N-Channel,GateESDProtection,SmallSignal,SC-7520V,238mA Features •LowGateChargeforFastSwitching •Small1.6x1.6mmFootprint •ESDProtectedGate •AEC−Q101QualifiedandPPAPCapable−NVA4001N •TheseDevicesarePb−FreeandareRoHSCompliant Application | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SmallSignalMOSFET SmallSignalMOSFET30V,250mA,DualN−Channel,SC−88 Features •LowGateChargeforFastSwitching •SmallFootprint−30SmallerthanTSOP−6 •ESDProtectedGate •Pb−FreePackageforGreenManufacturing(GSuffix) Applications •LowSideLoadSwitch •Li−IonBatterySuppliedDevices− | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SmallSignalMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SmallSignalMOSFET SmallSignalMOSFET30V,250mA,DualN−Channel,SC−88 Features •LowGateChargeforFastSwitching •SmallFootprint−30SmallerthanTSOP−6 •ESDProtectedGate •Pb−FreePackageforGreenManufacturing(GSuffix) Applications •LowSideLoadSwitch •Li−IonBatterySuppliedDevices− | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SmallSignalMOSFET SmallSignalMOSFET 30V,270mA,SingleN−Channel,SC−70 Features •LowGateChargeforFastSwitching •SmallFootprint−30SmallerthanTSOP−6 •ESDProtectedGate •AEC−Q101QualifiedandPPAPCapable−NVS4001N •TheseDevicesarePb−FreeandareRoHSCompliant Applications •LowSi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
“N-ChannelEnhancementModeMOSFET Features| ©Lowonresistance «ESDprotectedgateupto2HEM ©High-speedswitching oDrivecircuscanbesimple| TTemnassem| | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
MOSFET–Single,N-Channel,SmallSignal,SC-7030V,270mA Features •LowGateChargeforFastSwitching •SmallFootprint−30SmallerthanTSOP−6 •ESDProtectedGate •AEC−Q101QualifiedandPPAPCapable−NVS4001N •TheseDevicesarePb−FreeandareRoHSCompliant Applications •LowSideLoadSwitch •Li−IonBatterySuppliedDevices−CellP | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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