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382

SUBMINIATUREFUSES

LittelfuseLittelfuse Inc.

力特力特公司

382X

POWERTRANSFORMER

HAMMOND

Hammond Manufacturing Ltd.

AC382

TO-8CASCADABLEAMPLIFIERS

TELEDYNE

TELEDYNE

AD382

HighSpeed,LowDriftFETOperationalAmplifier

Scope. Thisspecificationcoversthedevicerequirementsforahighspeed,lowdriftFETinputoperationalamplifier.

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD382SH

HighSpeed,LowDriftFETOperationalAmplifier

Scope. Thisspecificationcoversthedevicerequirementsforahighspeed,lowdriftFETinputoperationalamplifier.

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ASJ382

2.6mm&3.5mmAUDIOJACKSSTEREO&MONOEARPHONEJACKS

ADAM-TECHAdam Technologies, Inc.

亚当科技亚当科技股份有限公司

BAS382

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技

BAS382

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技

BAS382

SchottkyBarrierDiodes

Features •Integratedprotectionringagainststaticdischarge •Lowcapacitance •Lowleakagecurrent •Lowforwardvoltagedrop •Verylowswitchingtime •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Genera

VishayVishay Siliconix

威世科技

BAS382

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技

BAS382

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技

BAS382

SmallSignalSchottkyDiodes

FEATURES •Integratedprotectionringagainststatic discharge •Lowcapacitance •Lowleakagecurrent •Lowforwardvoltagedrop •Verylowswitchingtime •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Generalpurposeandsw

VishayVishay Siliconix

威世科技

BAS382-TR

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技

BAS382-TR

SmallSignalSchottkyDiodes

VishayVishay Siliconix

威世科技

BR382/D

24-BITDIGITALSIGNALPROCESSOR

FEATURES DigitalSignalProcessingCore •Efficient,objectcodecompatible,24-bit56000familyDSPengine •Upto16.5MillionInstructionsPerSecond(MIPS)—60.6nsinstructioncycleat33MHz •Upto99MillionOperationsPerSecond(MOPS)at33MHz •Executesa1024-pointcomplexFastFo

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BUL382

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage:VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage:VCE(sat)=0.5V(Max)@IC=1A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BUL382

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUL381andBUL382manufacturedusinghighvoltageMultiepitaxialMesatechnologyfor cost-effectivehighperformance.TheyuseaHollowEmitterstructuretoenhanceswitching speeds.TheBULseriesisdesignedforuseinlightingapplicationsandlowcostswitch-modepower

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BUL382D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS

DESCRIPTION TheBUL381DismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheBULseriesisdesignedforuseinlightingapplicationsandlowcostswitch-modepowersupplies. ■STMicroelectronicsPREFERREDSALESTYPE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BUZ382

SIPMOSPowerTransistor(400V12.5A0.4OhmTO-218AA)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •FREDFET

SIEMENS

Siemens Ltd

BUZ382

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12.5A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    LNA382_QEG_EDG

  • 制造商:

    United Monolithic Semiconductors

  • 功能描述:

    MMW AMPLIFIER EVALUATION BOARD/DESIGNER KIT

供应商型号品牌批号封装库存备注价格
RFBay
20+
100
每一片来自原厂!
询价
rf-bay
23+
模块
400
询价
RFbay
600
询价
L3 Narda-MITEQ
21+
4-WFBGA,WLCSP
82765
RF/IF/RFID全系配套产品,原装正品现货!
询价
L3 Narda-MITEQ
24+
模块,SMA 连接器
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
更多LNA382_QEG_EDG供应商 更新时间2024-5-22 10:00:00