| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：LN60A01E；Package：PDIP-8；600V, Triple N-Channel MOSFET with Common Gate Control 文件：238.66 Kbytes 页数：7 Pages | MPS 美国芯源 | MPS | ||
丝印：LN60A01E；Package：SOIC-8；600V, Triple N-Channel MOSFET with Common Gate Control 文件：238.66 Kbytes 页数：7 Pages | MPS 美国芯源 | MPS | ||
GaAs INFRARED LIGHT EMITTING DIODE GaAs Infrared Light Emitting Diode For Optical Control Systems 文件：310.14 Kbytes 页数：7 Pages | Panasonic 松下 | Panasonic | ||
GaAs Infrared Light Emitting Diode GaAs Infrared Light Emitting Diode For Optical Control Systems 文件：44.62 Kbytes 页数：3 Pages | Panasonic 松下 | Panasonic | ||
GaAs Infrared Light Emitting Diode GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 8 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● Wide directivity : θ = 25 deg. (typ 文件：47.6 Kbytes 页数：3 Pages | Panasonic 松下 | Panasonic | ||
GaAs infrared light emitting diode For optical control systems GaAs infrared light emitting diode For optical control systems ■ Features • High-power output, high-efficiency: Ie = 9 mW/sr (min.) • Emitted light spectrum is suited for silicon photodetectors • Good radiant power output linearity with respect to input current • Wide directivity: θ = 20° (t 文件：83.6 Kbytes 页数：4 Pages | Panasonic 松下 | Panasonic | ||
GaAs infrared light emitting diode For optical control systems GaAs infrared light emitting diode For optical control systems ■ Features • High-power output, high-efficiency: Ie = 9 mW/sr (min.) • Emitted light spectrum is suited for silicon photodetectors • Good radiant power output linearity with respect to input current • Wide directivity: θ = 20° (t 文件：83.6 Kbytes 页数：4 Pages | Panasonic 松下 | Panasonic | ||
GaAs Infrared Light Emitting Diode GaAs Infrared Light Emitting Diode For light source of remote control systems Features ● High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Narrow directivity : θ = 15 deg. (typ.) ● Transparent epoxy resin package 文件：41.81 Kbytes 页数：3 Pages | Panasonic 松下 | Panasonic | ||
GaAs Infrared Light Emitting Diode GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency :PO = 8 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● Wide directivity : θ = 25 deg. (typ. 文件：42.27 Kbytes 页数：3 Pages | Panasonic 松下 | Panasonic | ||
GaAlAs Infrared Light Emitting Diode GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 10 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf = 30 ns(typ.) ● Small plastic package 文件：43.24 Kbytes 页数：2 Pages | Panasonic 松下 | Panasonic |
详细参数
- 型号：
LN6
- 功能描述：
MOSFET 600V, 3 N-Channel FET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Monolithic |
1941+ |
N/A |
909 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
MONOLITHIC |
25+ |
DIP-8 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
MPS/美国芯源 |
23+ |
DIP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Monolithic |
22+ |
NA |
909 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Monolithic Power Systems Inc. |
22+ |
8PDIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
MPS/美国芯源 |
23+ |
DIP8 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
MPS/美国芯源 |
2023+ |
DIP8 |
1000 |
一级代理优势现货,全新正品直营店 |
询价 | ||
Monolithic Power Systems Inc. |
2022+ |
8-PDIP |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
MPS/美国芯源 |
24+ |
NA/ |
4250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
Monolithic Power Systems Inc. |
25+ |
8-DIP(0.300 7.62mm) 7 引线 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 |
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相关库存
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