首页 >LMV821MTX>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Single/Dual/QuadLowVoltage,LowPower,R-to-ROutput,5MHzOpAmps | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
LMV821-N/LMV822-N/LMV822-N-Q1/LMV824/LMV824-N-Q1Single/Dual/QuadLowVoltage | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
POWERMOSFET GENERALDESCRIPTION TheLND820seriesprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoappro | LINEAR_DIMENSIONS Linear Dimensions Semiconductor | LINEAR_DIMENSIONS | ||
SILICONGATEENHANCEMENTMODERFPOWERLDMOSTRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re | Polyfet Polyfet RF Devices | Polyfet | ||
SMDShieldedPowerInductor Features: •Provideshighpowerandhighsaturation •Providesmagneticshieldingagainstradiation •Electrodedirectlyconnectedtoferritecore •ContactStackpoleforadditionalinductancevalues •Operatingtemperature40~125ºC •100%RoHScompliantandleadfreewithoutexemption | SEIStackpole Electronics Inc. 斯塔克波尔斯塔克波尔电子公司 | SEI | ||
SMDUnshieldedPowerInductor Features: •Provideshighpowerandhighsaturation •Silverplatedforlowcostdesign •Availableontapeandreelforautosurfacemounting •100%RoHScompliantandleadfreewithoutexemption •Halogenfree •REACHcompliant •ContactStackpoleforadditionalinductancevalues A | SEIStackpole Electronics Inc. 斯塔克波尔斯塔克波尔电子公司 | SEI | ||
650nA,Precision,Nanopower,Zero-DriftAmplifier | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
650nA,Precision,Nanopower,Zero-DriftAmplifier | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
650nA,Precision,Nanopower,Zero-DriftAmplifier | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
SILICONGATEENHANCEMENTMODERFPOWERLDMOSTRANSISTOR GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re | Polyfet Polyfet RF Devices | Polyfet |
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