丝印：NCE1502R；Package：SOT-223-3L；N-Channel Enhancement Mode Power MOSFET

文件：867.1 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.75Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.11 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 200 V (D-S) MOSFET

文件：1.57598 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：35.2 Kbytes 页数：5 Pages

INTERSIL