2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：35.2 Kbytes 页数：5 Pages

Intersil

N-Channel 200 V (D-S) MOSFET

文件：1.57598 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Drain Current ID= 2A@ TC=25C

文件：65.019 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Power MOSFET

文件：751.96 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

N-Channel Enhancement Mode Power MOSFET

文件：867.1 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子