丝印：0107；Package：SOT-23；-100V P-Channel Enhancement Mode MOSFET

文件：4.60028 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：90.53 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：42.44 Kbytes 页数：4 Pages

INTERSIL

Nch 100V 170A Power MOSFET

Features 1) Low on - resistance 2) High power small mold package (TO263AB) 3) Pb-free plating ; RoHS compliant 4) 100 UIS tested Application Switching

文件：2.88501 Mbytes 页数：13 Pages

ROHM

罗姆