首页 >LMRX16110>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
COMMONMODECHOKECOIL FEATURES| ®Excellentfrequencycharacteristics.| ®Useofinsulatingmaterialhavingsuperiorflame| resistance| ®Availableeitherverticalmountingtype,orhorizontal| mountingtype.| APPLICATIONS| @®Personalcomputersandperipherals.| @Digitalequipments.| ®Switching | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
COMMONMODECHOKECOIL FEATURES| ®Excellentfrequencycharacteristics.| ®Useofinsulatingmaterialhavingsuperiorflame| resistance| ®Availableeitherverticalmountingtype,orhorizontal| mountingtype.| APPLICATIONS| @®Personalcomputersandperipherals.| @Digitalequipments.| ®Switching | DIT DONG IL TECHNOLOGY LTD. | DIT | ||
NPNSiliconPowerTransistors NPNSiliconPowerTransistorsSWITCHMODEBridgeSeries ...specificallydesignedforuseinhalfbridgeandfullbridgeofflineconverters. •ExcellentDynamicSaturationCharacteristics •RuggedRBSOACapability •Collector-EmitterSustainingVoltage—VCEO(SUS)—400V •Collector-Emitter | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscSiliconNPNPowerTransistor DESCRIPTION· •Collector-EmitterSustainingVoltage-VCEO(SUS)=400V(Min) •HighSwitchingSpeed •WideAreaofSafeOperation APPLICATIONS •Designedforuseinhalfbridgeandfullbridgeofflineconverters. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNSiliconPowerTransistors ...specificallydesignedforuseinhalfbridgeandfullbridgeofflineconverters. •ExcellentDynamicSaturationCharacteristics •RuggedRBSOACapability •Collector–EmitterSustainingVoltage—VCEO(sus)—400V •Collector–EmitterBreakdown—V(BR)CES—650V •State–of–ArtBipolarP | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERTRANSISTORS15AMPERES400VOLTS175AND135WATTS NPNSiliconPowerTransistorsSWITCHMODEBridgeSeries ...specificallydesignedforuseinhalfbridgeandfullbridgeofflineconverters. •ExcellentDynamicSaturationCharacteristics •RuggedRBSOACapability •Collector–EmitterSustainingVoltage—VCEO(sus)—400V •Collector–Emitte | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
NPNSiliconPowerTransistors NPNSiliconPowerTransistorsSWITCHMODEBridgeSeries ...specificallydesignedforuseinhalfbridgeandfullbridgeofflineconverters. •ExcellentDynamicSaturationCharacteristics •RuggedRBSOACapability •Collector-EmitterSustainingVoltage—VCEO(SUS)—400V •Collector-Emitter | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
NPNSiliconPowerTransistors NPNSiliconPowerTransistorsSWITCHMODEBridgeSeries ...specificallydesignedforuseinhalfbridgeandfullbridgeofflineconverters. •ExcellentDynamicSaturationCharacteristics •RuggedRBSOACapability •Collector-EmitterSustainingVoltage—VCEO(SUS)—400V •Collector-Emitter | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
NPNSiliconPowerTransistors NPNSiliconPowerTransistorsSWITCHMODEBridgeSeries ...specificallydesignedforuseinhalfbridgeandfullbridgeofflineconverters. •ExcellentDynamicSaturationCharacteristics •RuggedRBSOACapability •Collector-EmitterSustainingVoltage—VCEO(SUS)—400V •Collector-Emitter | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
NPNSiliconPowerTransistors ...specificallydesignedforuseinhalfbridgeandfullbridgeofflineconverters. •ExcellentDynamicSaturationCharacteristics •RuggedRBSOACapability •Collector–EmitterSustainingVoltage—VCEO(sus)—400V •Collector–EmitterBreakdown—V(BR)CES—650V •State–of–ArtBipolarP | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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