丝印：Q20N04；Package：DFN3.3X3.3；N-ChannelEnhancement Mode Power MOSFET

文件：1.06044 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

P-Channel 20-V (D-S) MOSFET

文件：215.72 Kbytes 页数：4 Pages

BWTECH

N-Channel 30-V (D-S) MOSFET

文件：1.01535 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

20A, 40V N-CHANNEL ENHANCEMENT MODE

 DESCRIPTION The UTT20N04 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 33 mΩ @ VGS=10V, ID=10A RDS(ON) ≤ 60 mΩ @

文件：446.1 Kbytes 页数：7 Pages

UTC

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