首页 >LML6344TRPBF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
6-PinμPResetCircuitwithPower-FailComparator GeneralDescription TheMAX6342–MAX6345familyofmicroprocessor(µP)supervisorycircuitsmonitorspowersuppliesindigitalsystems.ThesedevicessignificantlyimprovesystemreliabilityandaccuracycomparedtoseparateICsordiscretecomponents. Features ♦Small6-PinSOT23Package ♦Pre | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
6-Pin關PResetCircuitwithPower-FailComparator GeneralDescription TheMAX6342–MAX6345familyofmicroprocessor(µP)supervisorycircuitsmonitorspowersuppliesindigitalsystems.ThesedevicessignificantlyimprovesystemreliabilityandaccuracycomparedtoseparateICsordiscretecomponents. Features ♦Small6-PinSOT23Package ♦Pre | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
6-PinuPResetCircuitwithPower-FailComparator | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
5-PinuPSupervisoryCircuitswithWatchdogandManualReset | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
6-PinμPResetCircuitwithPower-FailComparator GeneralDescription TheMAX6342–MAX6345familyofmicroprocessor(µP)supervisorycircuitsmonitorspowersuppliesindigitalsystems.ThesedevicessignificantlyimprovesystemreliabilityandaccuracycomparedtoseparateICsordiscretecomponents. Features ♦Small6-PinSOT23Package ♦Pre | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
General-PurposeSwitchingDeviceApplications General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1=115mΩ(typ.) •4Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
SingleP-ChannelPowerMOSFET ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features •LowOn-Resistance •4Vdriv | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
General-PurposeSwitchingDeviceApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
SingleP-ChannelPowerMOSFET ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features •LowOn-Resistance •4Vdriv | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SingleP-ChannelPowerMOSFET ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features •LowOn-Resistance •4Vdriv | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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