首页 >LMI0412C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
COMPOSITEFORMINGSMDINDUCTORS Features: LargeCurrentandLowDCR. Magneticallyshieldedconstruction. Highfrequencyrangeupto1.0MHz. RoHScompliant*andhalogenfree. Lownoise. Operatingtemperaturerange:-40℃TO+125℃ | FPEGUANGDONG MISUN TECHNOLOGY CO.,LTD. 美信科技广东美信科技股份有限公司 | FPE | ||
WaveReady??Passive,LGX-compatibleShelves | JDSUJDS Uniphase Corporation 捷迪讯 | JDSU | ||
Highvoltagereisistor | MURATA1Murata Manufacturing Co., Ltd 村田村田制作所 | MURATA1 | ||
RoHSCompliant | OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司 | OHMITE | ||
Powerdissipationupto2W | OHMITEOHMITE MANUFACTURING COMPANY 欧敏欧敏电阻制造公司 | OHMITE | ||
40V(D-S)N-ChannelEnhancementModePowerMOSFET | MORESEMIMORE Semiconductor Company Limited 摩矽半导体摩矽半导体有限公司 | MORESEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELMOSFETFORSWITCHING | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ConnectorizedPINPhotodiodes Description ThePDTrangeofproductsincludesavarietyofconnectorizedPINphotodiodesdesignedforwideoperatingtemperature,lowcostapplicationssuchasfiberintheloop.TheplanarInGaAsphotodiodesaremanufacturedusingourMOVPEgrowthtechnologyandgivelowleakage,highresponsiv | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
ConnectorizedPINPhotodiodes Description ThePDTrangeofproductsincludesavarietyofconnectorizedPINphotodiodesdesignedforwideoperatingtemperature,lowcostapplicationssuchasfiberintheloop.TheplanarInGaAsphotodiodesaremanufacturedusingourMOVPEgrowthtechnologyandgivelowleakage,highresponsiv | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP |
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