丝印：YJD80N03A；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

文件：1.41055 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

N-Channel Enhancement Mode Power MOSFET

文件：322.59 Kbytes 页数：4 Pages

BWTECH

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

文件：219.37 Kbytes 页数：10 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP.

文件：297.39 Kbytes 页数：12 Pages

RENESAS

瑞萨