MTD20N06HD

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.045OHM

HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThisadvancedHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewith

MTD20N06HD

PowerMOSFET20Amps,60VoltsN?묬hannelDPAK

MTD20N06HDL

PowerMOSFET20Amps,60Volts,LogicLevelN?묬hannelDPAK

MTD20N06HDL

TMOSPOWERFETLOGICLEVEL20AMPERES60VOLTSRDS(on)=0.045OHM

HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

MTD20N06V

N?묬hannelDPAK

MTD20N06V

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSV™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50

MTP20N06

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSVPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju

MTP20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP20N06V

TMOSPOWERFET20AMPERES60VOLTSRDS(on)=0.080OHM

TMOSVPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Ju

MTP20N06V

N?묬hannelPowerMOSFET