包装：散装 类别：标签，标志，护栏，标识 标签，贴纸，贴标 - 空白 描述：LABEL, 1.5 IN DIA

Brady Corporation

包装：散装 类别：标签，标志，护栏，标识 标签，贴纸，贴标 - 空白 描述：LABEL, 1.5 IN DIA

Brady Corporation

1W POWER PHEMT

DESCRIPTION AND APPLICATIONS The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 1500 mm Schottky barrier gate. The recessed “mushroom” gate structure

文件：40.31 Kbytes 页数：2 Pages

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PACKAGED LOW NOISE PHEMT

DESCRIPTION AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure

文件：33.35 Kbytes 页数：2 Pages

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