首页 >LMBT5401LT1G单片机MCU>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HighVoltageTransistor FEATURE ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | WILLAS | ||
HighVoltageTransistor HighVoltageTransistor PNPSilicon | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
SOT-23Plastic-EncapsulateTransistors
| WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | AVICTEK Avic Technology | AVICTEK | ||
HighVoltageTransistor(PNPSilicon) HighVoltageTransistor PNPSilicon Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighVoltageTransistor(PNPSilicon) HighVoltageTransistor PNPSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
PNPEPITAXIALPLANARTRANSISTOR Description TheMMBT5401LT1isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •HighCollector-EmitterBreakdownVoltage.BVCEO=150V(@IC=1mA) •ComplementstoNPNTypeMMBT5551LT1. | TGS Tiger Electronic Co.,Ltd | TGS | ||
HighVoltageTransistor(PNPSilicon) HighVoltageTransistor PNPSilicon Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighVoltageTransistor HighVoltageTransistor PNPSilicon Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighVoltageTransistorPNPSilicon HighVoltageTransistor PNPSilicon Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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